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US 7,887,677 B2Granted
Silicon object forming method and apparatus
AssigneeNissin Electric Co., Ltd.
InventorsTakashi Mikami, Atsushi Tomyo, Kenji Kato, Eiji Takahashi, Tsukasa Hayashi
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Abstract
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
Claims22
A silicon object forming method including the steps of:
- arranging a silicon object formation target substrate with a silicon object formation target surface of the substrate directed up in a first chamber;
- arranging at least one silicon sputter target in each of a pair of second chambers communicated with the first chamber at right and left positions thereof;
- supplying a hydrogen gas into each of the second chambers and forming plasma for chemical sputtering from the hydrogen gas supplied into the second chambers with a plasma-forming device for sputtering;
- and
- effecting chemical sputtering on the silicon sputter targets with the plasma for chemical sputtering formed in the second chambers, thereby generating particles contributing to silicon object formation, and forming a silicon object on the silicon object formation target substrate arranged in the first chamber from the particles contributing to silicon object formation which move to the first chamber from the second chambers.
2 more elements
A silicon object forming apparatus including:
- a first chamber having a substrate holder for holding a silicon object formation target substrate with a silicon object formation target surface of the substrate directed up;
- a pair of second chambers communicated with the first chamber at right and left positions thereof;
- an exhaust device exhausting a gas from the first chamber and the second chambers;
- a silicon sputter target arranged in the second chambers;
- a hydrogen gas supply device supplying a hydrogen gas into the second chambers;
- and
- a plasma-forming device for forming plasma for chemical sputtering from the hydrogen gas supplied into the second chambers from the hydrogen gas supply device;
- wherein a silicon object can be formed on the silicon object formation target substrate held by the substrate holder from particles contributing to silicon object formation which are formed by chemical sputtering effected on the silicon sputter target with the plasma formed for chemical sputtering in each of the second chambers and move to the first chamber.
5 more elements
A silicon object forming apparatus including:
- a first chamber having a substrate holder for holding a silicon object formation target substrate with a silicon object formation target surface of the substrate directed up;
- a pair of second chambers communicated with the first chamber at right and left positions thereof;
- an exhaust device exhausting a gas from the first chamber and the second chambers;
- a hydrogen gas supply device supplying a hydrogen gas into the second chambers;
- a silane-containing gas supply device supplying a silane-containing gas into the second chambers;
- a silicon film formation plasma-forming device for forming plasma from the hydrogen gas supplied into the second chambers from the hydrogen gas supply device and the silane-containing gas supplied into the second chambers from the silane-containing gas supply device to form a silicon film on an inner wall of each of the second chambers;
- and
- a plasma-forming device for forming plasma for chemical sputtering from the hydrogen gas supplied into the second chambers from the hydrogen gas supply device after the silicon film formation on the inner wall of each of the second chambers;
- wherein the silicon film formed on the inner wall of each of the second chambers is used as a silicon sputter target, and chemical sputtering is effected on the sputter target with the plasma formed for chemical sputtering in each of the second chambers, thereby generating particles moving to the first chamber and contributing to silicon object formation, whereby a silicon object can be formed from the particles on the silicon object formation target substrate held by the substrate holder.
6 more elements
Dependencies are inferred from the claim text.