Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning

A process chamber cleaning method for cleaning a process chamber of a substrate processing apparatus, the method starting a cleaning process without setting the process chamber opened to the atmosphere after performing a plasma oxidization process on a substrate having a laminated film including a tungsten-containing film and a poly-silicon film to selectively oxidize the poly-silicon film inside the process chamber and thereby contaminating the process chamber with tungsten oxide, and the method performing the cleaning process while exhausting gas from inside the process chamber such that the cleaning process, the method comprising:

• supplying a cleaning gas into the process chamber, the cleaning gas consisting of O2 gas and H2 gas and an inactive gas or consisting of O2 gas and H2 gas with a ratio of the H2 gas relative to the O2 gas set at 2 or more;
• generating plasma of the cleaning gas inside the process chamber;
• applying the plasma to the tungsten oxide to sublimate the tungsten oxide;
• and
• removing the sublimated tungsten oxide thus generated from inside the process chamber along with gas being exhausted.

A substrate processing method comprising:

• performing a plasma oxidization process on a first substrate having a first laminated film including a first tungsten-containing film and a first poly-silicon film to selectively oxidize the first poly-silicon film inside a process chamber of a substrate processing apparatus;
• performing a cleaning process inside the process chamber without the first substrate placed therein while exhausting gas from inside the process to remove tungsten oxide with which the process chamber is contaminated, the cleaning process being started without setting the process chamber opened to the atmosphere after the plasma oxidization process, the cleaning process including,
• supplying a cleaning gas into the process chamber, the cleaning gas consisting of O2 gas and H2 gas and an inactive gas or consisting of O2 gas and H2 gas with a ratio of the H2 gas relative to the O2 gas set at 2 or more,
• generating plasma of the cleaning gas inside the process chamber,
• applying the plasma to the tungsten oxide to sublimate the tungsten oxide, and
• removing the sublimated tungsten oxide thus generated from inside the process chamber along with gas being exhausted;
• and
• performing the plasma oxidation process on a second substrate having a second laminated film including a second tungsten-containing film and a second poly-silicon film to selectively oxidize the second poly-silicon film inside the process chamber after the cleaning process.