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US 7,887,634 B2Granted
Method of producing a semiconductor element and semiconductor element
AssigneeInfineon Technologies AG
InventorLuis-Felipe Giles
Life of this patent
Estimating the term…
Abstract
In a method of producing a semiconductor element in a substrate, a plurality of carbide precipitates is formed in the substrate, doping atoms are implanted into the substrate, thereby forming crystal defects in the substrate, the substrate is heated, such that at least a part of the crystal defects is eliminated using the carbide precipitates, and the semiconductor element is formed using the doping atoms.
Claims31
A method of producing a semiconductor element in a substrate, comprising:
- forming a plurality of carbide precipitates in the substrate;
- implanting doping atoms into the substrate, thereby forming crystal defects in the substrate;
- and
- heating the substrate, such that at least a portion of the crystal defects is eliminated using the carbide precipitates,
- wherein the semiconductor element is formed using the doping atoms.
2 more elements
A semiconductor element, comprising:
- a substrate;
- at least one shallow junction formed in the substrate;
- doping atoms formed in the shallow junction;
- and
- a plurality of carbide precipitates formed in the substrate below the at least one shallow junction.
2 more elements
Dependencies are inferred from the claim text.