Polishing slurry for polishing aluminum film and polishing method for polishing aluminum film using the same
AssigneeHitachi Chemical Company, Ltd.
InventorsHiroshi Ono, Toranosuke Ashizawa, Yasuo Kamigata
Life of this patent
Estimating the term…
Abstract
A polishing slurry for polishing an aluminum film used for LSI or the like and a method for polishing an aluminum film using the same are provided. A polishing slurry for polishing an aluminum film comprising a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, and a polishing method for polishing an aluminum film using the polishing slurry.
Claims12
A polishing slurry consisting of a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, wherein said polishing slurry is capable of polishing an aluminum film.
A polishing slurry consisting of an oxidizing agent, a polyvalent carboxylic acid having a first stage acid dissociation exponent at 25° C. of 3 or lower, colloidal silica, and water, and having a pH from 2 to 4, wherein said polishing slurry is capable of polishing an aluminum film.
Dependencies are inferred from the claim text.