High purity copper sulfate and method for production thereof
AssigneeJX Nippon Mining & Metals Corporation
InventorsYuichiro Shindo, Kouichi Takemoto
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Abstract
High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.
Claims17
A high purity copper sulfate prepared by a process comprising the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, subjecting this to filtration to obtain high purity copper sulfate, and performing desiccation thereto, wherein a purity of said copper sulfate is 99.99 wt % or higher and in which a content of transition metals, such as Fe, Cr, and Ni, is 3 wtppm or less.
A copper sulfate having a purity of 99.99 wt % or higher.
An electrolytic solution for electroplating copper to form a circuit or wiring of a semiconductor device, comprising:
- copper sulfate having a purity of 99.99 wt % (4N) or higher;
- said copper sulfate having a content of transition metals of 3 wtppm or less;
- said copper sulfate having a content of Ag and Cl of 1 wtppm or less, respectively;
- said copper sulfate having a content of alkali metals and alkaline earth metals of 1 wtppm or less, respectively;
- and
- said copper sulfate having a content of a Si containing oxide of 10 wtppm or less based on Si conversion.
Dependencies are inferred from the claim text.