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US 7,885,105 B2Granted
Magnetic tunnel junction cell including multiple vertical magnetic domains
AssigneeQUALCOMM Incorporated
InventorsXia Li, Seung H. Kang, Xiaochun Zhu
Life of this patent
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Abstract
Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.
Claims24
A magnetic tunnel junction (MTJ) structure comprising:
- a MTJ cell comprising multiple vertical side walls, each of the multiple vertical side walls defining a unique vertical magnetic domain, each of the unique vertical magnetic domains adapted to store a digital value.
A device comprising:
- a single magnetic tunnel junction (MTJ) cell adapted to store multiple digital values, wherein at least one of the multiple digital values is stored using a vertical magnetic field;
- and
- multiple terminals coupled to the MTJ cell.
A method of fabricating a device, the method comprising:
- performing a deep trench photo and etch process to create a deep trench in a substrate;
- depositing a bottom electrode into the deep trench;
- depositing layers to form a magnetic tunnel junction (MTJ) structure including a fixed layer, a tunnel barrier, and a free layer, at least a first portion of the MTJ structure coupled to the bottom electrode;
- depositing a top electrode onto at least a second portion of the MTJ structure;
- and
- performing magnetic anneal process on the MTJ structure in a horizontal direction and in a vertical direction, the horizontal direction substantially parallel to a plane of the substrate and the vertical direction substantially normal to the plane of the substrate;
- wherein a first portion of the free layer has a first magnetic domain in the vertical direction and wherein a second portion of the free layer has a second magnetic domain in the horizontal direction.
4 more elements
Dependencies are inferred from the claim text.