Growth of boron nanostructures with controlled diameter
AssigneeYale University
InventorsLisa Pfefferle, Dragos Ciuparu
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Abstract
A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.
Claims10
A one-dimensional superconducting device comprising a boron nanostructure having a diameter of less than 50 nm and impregnated with an electron donor element, the boron nanostructure having a superconducting transition temperature greater than 36 degrees K, wherein the boron nanostructure comprises a nanotube.
A one-dimensional superconducting device comprising a boron nanostructure having a diameter of less than 50 nm and impregnated with an electron donor element, the boron nanostructure having a superconducting transition temperature greater than 36 degrees K, wherein the boron nanostructure comprises a nanofiber having a diameter of less than 1 nm.
A single-wall boron nanotube impregnated with an electron donor element, the nanotube having a diameter less than 100 nm and a superconducting transition temperature greater than 36 degrees K.
Dependencies are inferred from the claim text.