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US 7,884,050 B2Granted
Band-shaped high-temperature superconductor (HTSL) and method of producing
AssigneeZenergy Power GmbH
InventorMichael Bäcker
Life of this patent
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Abstract
A band-shaped high-temperature superconductor (HTSL) with high critical current density can be produced economically in a wet-chemical process. In the process, a first precursor solution is applied to a carrier, dried, and annealed. Additional precursor solutions may then be applied, with the first precursor solution contain little or no pinning centers, and any subsequent precursor solutions contains a higher concentration of pinning centers than the first precursor solutions.
Claims36
A wet-chemical process for the production of a textured, band-shaped HTSL with pinning centers, the method comprising:
- (a) applying a base precursor solution to a textured carrier having a concentration of pinning centers c0;
- (b) drying the precursor solution to form a base precursor layer;
- (c) annealing the layer to form a high temperature superconductor layer;
- and
- (d) repeating at least the applying step (a) and the drying step (b) to form an additional precursor layer disposed over the base precursor layer, wherein:
- the applying and drying steps are repeated i times, i being a natural number greater than 0;
- and
- each additional precursor layer applied during the repetition step (d) comprises a concentration of pinning centers ci,
- wherein:
- the concentration c0 of pinning centers in the base precursor solution is less than the concentration c1 of pinning centers in the additional precursor solution applied during the first repetition step (d) such that 0<c0<c1,
- the repetition step (d) includes an ith and jth repetition of step (a),
- di<dj, with di designating the layer thickness of the layer applied during the ith repetition step (a) and dj designating the layer thickness of the layer applied during the jth repetition of step of (a),
- ci<cj, applies to layers i, j, with ci designating the concentration of the pinning centers of the precursor solution applied during the ith repetition of step (a) and cj designating the concentration of pinning centers of the precursor solution applied during the jth repetition of step of (a).
10 more elements
A band-shaped HTSL comprising:
- a carrier;
- and
- a wet chemical process HTSL layer, the HTSL layer comprising a first precursor layer disposed on the carrier, a second precursor layer disposed over the first precursor layer, and a third precursor layer disposed over the second precursor layer, wherein the thickness of the second precursor layer is greater than the thickness of each the first precursor layer and the third precursor layer,
- wherein the concentration of pinning centers in the layers alternates such that the pinning center concentration of the first layer is less than the pinning center concentration of the second layer, and the pinning center concentration of the second layer is greater than the pinning concentration of the third layer.
1 more element
A wet-chemical process for the production of a band-shaped HTSL layer with pinning centers, the method comprising:
- (a) applying a first precursor solution to a carrier;
- (b) drying the solution to form a first precursor layer;
- (c) applying a second precursor solution the first precursor layer;
- (d) drying the second precursor solution to form a second precursor layer;
- (e) applying a third precursor solution to the second precursor layer;
- (f) drying the third precursor solution to form a third precursor layer;
- and
- (e) annealing the precursor layers to form a high temperature superconductor layer, wherein the concentration of pinning centers in the first precursor solution c1 is less than the concentration of pinning centers in each of the second precursor solution c2 and the third precursor solution c3, and wherein the concentration of pinning centers in the third precursor solution c3 is less than the concentration of the pinning centers in the second precursor solution c2.
5 more elements
A wet-chemical process for the production of a textured, band-shaped HTSL with pinning centers, the method comprising:
- (a) applying a base precursor solution to a textured carrier having a concentration of pinning centers co;
- (b) drying the precursor solution to form a base precursor layer;
- (c) annealing the layer to form a high temperature superconductor layer;
- and
- (d) repeating at least the applying step (a) and the drying step (b) to form an additional precursor layer disposed over the base precursor layer, wherein:
- the applying and drying steps are repeated i times, with i being a natural number greater than 0;
- and
- each additional precursor layer applied during the repetition step (d) comprises a concentration of pinning centers ci, with ci designating the concentration of the pinning centers in the precursor solution applied during the repetition of step (a) as designated by the index,
- wherein the concentration c0 of pinning centers in the base precursor solution is less than the concentration c1 of pinning centers in the additional precursor solution applied during the first repetition step (d) such that 0<c0<c1, and wherein ci<ci+1, with i being an even natural number greater than 0.
6 more elements
Dependencies are inferred from the claim text.