Pulsed high-voltage silicon quantum dot fluorescent lamp
AssigneeAtomic Energy Council-Institute of Nuclear Energy Research
InventorsTsun-Neng Yang, Shan-Ming Lan, Chin-Chen Chiang, Wei-Yang Ma, Chien-Te Ku
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AssigneeAtomic Energy Council-Institute of Nuclear Energy Research
InventorsTsun-Neng Yang, Shan-Ming Lan, Chin-Chen Chiang, Wei-Yang Ma, Chien-Te Ku
Estimating the term…
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
A method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, the method comprising the steps of
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