Method of manufacturing an actuator device
AssigneeSeiko Epson Corporation
InventorXin-Shan Li
Life of this patent
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Abstract
A method of manufacturing an actuator device includes forming a Zr layer on one surface of a substrate, forming a ZrO2 layer by oxidizing the Zr layer, forming a lower electrode on top of the ZrO2 layer, forming a piezoelectric layer on top of the lower electrode, and forming an upper electrode on top of the piezoelectric layer. In the method, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and the Zr layer thus formed has special crystal regions that protrude from the opposite surface of the Zr layer from the substrate. Each special crystal region has a height of 10 to 100 nm and a diameter of 0.1 to 1 μm when viewed from above, and the special crystal regions exist with a density of 1.0×106 to 1.0×103/cm2.
Claims5
A method of manufacturing an actuator device comprising:
- forming a Zr layer on one surface of a substrate;
- forming a ZrO2 layer by oxidizing the Zr layer;
- forming a lower electrode on top of the ZrO2 layer;
- forming a piezoelectric layer on top of the lower electrode;
- and
- forming an upper electrode on top of the piezoelectric layer,
- wherein, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and
- the Zr layer thus formed has special crystal regions that protrude from an opposite surface of the Zr layer from the substrate, each special crystal region having a height of 10 to 100 nm and a diameter of 0.1 to 1 μm when viewed from above, and the special crystal regions existing with a density of 1.0×106 to 1.0×108/cm2.
Dependencies are inferred from the claim text.