Processes for the purification of trichlorosilane and silicon tetrachloride

A process for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride, the process comprising:

• adding diphenylthiocarbazone and/or triphenylchloromethane to the technical grade trichlorosilane and/or technical grade silicon tetrachloride to form complex impurity macromolecules with impurities in the technical grade trichlorosilane and/or technical grade silicon tetrachloride, the impurities being selected from the group consisting of boron impurities, metallic impurities, and combinations thereof;
• distilling the technical grade trichlorosilane and/or technical grade silicon tetrachloride having complex impurity macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottoms comprise complex impurity macromolecules separated from the first distillation tops, wherein:
• the first column distillation initially operates with a total reflux of the first distillation tops such that the impurities completely form complex impurity macromolecules;
• and
• after the initial total reflux of the first distillation tops, the ratio of the amount of condensed first distillation tops returned to the top of the first column distillation to the amount of condensed first distillation tops that is extracted from first column distillation is between 0.3:1 to 2.8:1 for trichlorosilane and between 0.17:1 and 5:1 for silicon tetrachloride;
• and
• distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane and/or silicon tetrachloride and a compound selected from the group consisting of phosphorus containing compounds, arsenic containing compounds, aluminum compounds, antimony compounds, metalloid compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.