# US 7,872,265 B2 · Electrical switching device and method of embedding catalytic material in a diamond substrate

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- Number: US 7,872,265 B2
- Document ID: US7872265B2
- Status: Granted
- Kind: B2
- Application number: 12/835,669
- Filed: 2010-07-13
- Published: 2010-12-09
- Granted: 2011-01-18
- Earliest claimed: 2006-06-13
- Assignees: Evince Technology Limited
- Inventors: Gareth Andrew Taylor
- Web page: https://patentgrep.com/patent/US7872265B2

## CPC

- H10D 62/8303: {Diamond}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 8/051: {of Schottky diodes}
- H10D 12/021: {of gated diodes, e.g. field-controlled diodes [FCD]}
- H10D 12/211: {Gated diodes}
- H10D 48/031: {of three-or-more electrode devices}
- H10D 64/0114: {to diamond, semiconducting diamond-like carbon or graphene}
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electrical device according to one embodiment includes a substrate including at least one diamond layer; at least one first electrode in contact with said substrate, wherein at least one said first electrode includes at least one electrically conductive protrusion extending into said substrate; and at least one second electrode in contact with said substrate and spaced from the or each said first electrode.

## Claims

### Claim 1

An electrical device comprising:
a substrate including at least one diamond layer;
at least one first electrode in contact with said substrate, wherein at least one said first electrode includes at least one electrically conductive protrusion extending into said substrate; and
at least one second electrode in contact with said substrate and spaced from the or each said first electrode wherein said substrate comprises, adjacent at least a distal end of at least one said protrusion, a diamond material including first impurities adapted to modify the electrical characteristics of said diamond material adjacent said distal end.

### Claim 2 (depends on 1)

A device according to claim 1, wherein the first impurities are adapted to provide said material with n-type electrical characteristics.

### Claim 3 (depends on 1)

A device according to claim 1, wherein the substrate comprises, adjacent at least one said second electrode, diamond material including second impurities adapted to modify the electrical characteristics of said diamond material adjacent said second electrode.

### Claim 4 (depends on 3)

A device according to claim 3, wherein the second impurities are adapted to provide said diamond material with p-type electrical characteristics.

### Claim 5 (depends on 1)

A device according to claim 1, further comprising at least one third electrode arranged in said substrate and spaced from the or each said first electrode and the or each said second electrode.

### Claim 6 (depends on 5)

A device according to claim 5, wherein at least one said third electrode defines at least one respective aperture adjacent at least one said protrusion.

### Claim 7 (depends on 5)

A device according to claim 5, wherein at least one said third electrode is arranged in a layer of intrinsic diamond material.

### Claim 8 (depends on 5)

A device according to claim 5, wherein at least one said third electrode includes non-diamond carbon.

### Claim 9 (depends on 5)

A device according to claim 5, wherein at least one said third electrode includes diamond material containing impurities adapted to increase the electrical conductivity of said material.

### Claim 10 (depends on 1)

A device according to claim 1, further comprising a plurality of separated said second electrodes.