Semiconductor laser device
AssigneeRohm Co., Ltd.
InventorsMasashi Kubota, Kuniyoshi Okamoto, Taketoshi Tanaka
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Abstract
A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λc of a reflectance spectrum satisfies the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer.
Claims23
A semiconductor laser device made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, comprising:
- a cavity including an active layer containing In;
- and
- distributed Bragg reflectors coating both cavity end faces of the cavity respectively, each of the reflectors having a central wavelength λc of a reflectance spectrum satisfying the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer,
- wherein the emission peak wavelength of the spontaneous emission is a peak wavelength of a current injection spectrum at a current density of not more than 0.1 kA/cm2.
A semiconductor laser device made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, comprising:
- a cavity including an active layer containing In;
- and
- distributed Bragg reflectors coating both cavity end faces of the cavity respectively, each of the reflectors having a central wavelength λc of a reflectance spectrum satisfying the relation λSP−10 nm≦λc≦λsp+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer,
- wherein the emission peak wavelength of the spontaneous emission is a peak wavelength of a current injection spectrum at a current density of not more than 500 μA/cm2.
A semiconductor laser device made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, comprising:
- a cavity including an active layer containing In;
- and
- distributed Bragg reflectors coating both cavity end faces of the cavity respectively, each of the reflectors having a central wavelength λc of a reflectance spectrum satisfying the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer,
- wherein the emission peak wavelength of the spontaneous emission is a photoluminescence peak wavelength in a case of weakly exciting the active layer at an excitation density of not more than 30 W/cm2.
Dependencies are inferred from the claim text.