Epitaxial deposition of doped semiconductor materials

A method for depositing a carbon doped epitaxial semiconductor layer, the method comprising:

• maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material and at least a second different exposed material;
• providing a flow of a silicon source gas to the process chamber, wherein the silicon source gas comprises dichlorosilane;
• and
• providing a flow of a carbon precursor to the process chamber;
• wherein the carbon doped epitaxial semiconductor layer is selectively deposited on the exposed single crystal material relative to the second exposed material at the pressure of greater than about 700 torr, thereby depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material at a rate greater than about 5 nm min−1, and wherein the carbon doped epitaxial semiconductor layer thus deposited comprises between about 0.8% and about 1.2% substitutionally doped carbon in single crystal silicon.