Method of manufacturing a piezoelectric thin film device
AssigneesNGK Insulators, Ltd., NGK Optoceramics Co., Ltd.
InventorsTakashi Yoshino, Shoichiro Yamaguchi, Yuichi Iwata, Akira Hamajima, Kengo Suzuki
Life of this patent
Estimating the term…
Loading patent…
AssigneesNGK Insulators, Ltd., NGK Optoceramics Co., Ltd.
InventorsTakashi Yoshino, Shoichiro Yamaguchi, Yuichi Iwata, Akira Hamajima, Kengo Suzuki
Estimating the term…
In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.
A method for manufacturing a piezoelectric thin film device that includes a single or a plurality of film bulk acoustic resonators, comprising:
Dependencies are inferred from the claim text.