Active resonant circuit with resonant-frequency tunability
AssigneeRenesas Electronics Corporation
InventorsToru Masuda, Hiroshi Mori
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AssigneeRenesas Electronics Corporation
InventorsToru Masuda, Hiroshi Mori
Estimating the term…
The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.
A semiconductor integrated circuit comprising:
A semiconductor integrated circuit comprising:
Dependencies are inferred from the claim text.