Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device
AssigneeSeiko Epson Corporation
InventorsTakuya Owaki, Yuji Mitsui, Yuzuru Yoshizawa
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AssigneeSeiko Epson Corporation
InventorsTakuya Owaki, Yuji Mitsui, Yuzuru Yoshizawa
Estimating the term…
An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle θ of a rotary Y cut quartz substrate is set in a range of −64.0°<θ<−49.3° in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90°±5° with respect to a crystal axis X. An electrode film thickness H/λ standardized by a wavelength of the IDT electrode is 0.04<H/λ<0.12, where λ is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 μm or more.
An SH wave type surface acoustic wave device, comprising:
An SH wave type surface acoustic wave device, comprising:
An SH wave type surface acoustic wave device, comprising:
Dependencies are inferred from the claim text.