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US 7,843,073 B2Granted
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorAkihisa Iwasaki
Life of this patent
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Abstract
A semiconductor device includes: a first insulation film formed over a semiconductor substrate; and a plurality of first interconnects selectively formed in the first insulation film. A plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each of the gaps has a cylindrical shape extending vertically to a principal surface of the semiconductor substrate. A cap film is formed of metal or a material containing metal in upper part of each of the first interconnects.
Claims13
A semiconductor device comprising:
- a first insulation film formed over a semiconductor substrate;
- and
- a plurality of first interconnects formed in the first insulation film,
- wherein a plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each of the gaps has a cylindrical shape extending vertically to a principal surface of the semiconductor substrate,
- the plurality of gaps are formed so that lower parts of the plurality of gaps and a bottom part of at least one of the plurality of first interconnects are substantially at the same level, and
- a cap film is formed of metal or a material containing metal in upper part of each of the first interconnects.
3 more elements
Dependencies are inferred from the claim text.