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US 7,843,067 B2Granted
Method and structure of integrated rhodium contacts with copper interconnects
AssigneeInternational Business Machines Corporation
InventorsJohn M. Cotte, Balasubramanian Haran, Christopher C. Parks, Xiaoyan Shao, Eva E. Simonyi
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Abstract
The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.
Claims20
A microelectronic structure comprising:
- a contact structure;
- an interconnect barrier layer;
- and
- an interconnect layer, wherein the contact structure comprises:
- a silicide layer;
- a dielectric layer;
- a contact layer;
- optionally a contact barrier layer;
- optionally a seed layer;
- and
- a Rh metal fill layer, wherein
- the interconnect barriers layer is at least one layer selected from the group consisting of Ta, TaN, Ti, TiN, W, WN, Mo, MoN and combinations of these layers,
- wherein the interconnect layer comprises a copper layer and an interconnect dielectric and
- wherein the interconnect barrier layer is between the Rh metal fill layer and the copper layer.
11 more elements
Dependencies are inferred from the claim text.