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US 7,843,066 B2Granted
Semiconductor device
AssigneeRenesas Technologies Corp.
InventorKazuo Tomita
Life of this patent
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Abstract
The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.
Claims26
A semiconductor device comprising:
- a semiconductor substrate;
- a first layer on the semiconductor substrate, wherein the first layer includes a first insulation film and a gate electrode formed on the semiconductor substrate;
- a plurality of second layers on the first layer, wherein each of the second layers includes a second insulation film and a first dummy metal wiring,
- wherein the second insulation film has a dielectric constant of less than 2.7, and
- wherein the first dummy metal wiring is formed in the second insulation film;
- a third layer on the plurality of second layers, wherein the third layer includes a third insulation film, a first metal wiring and a plurality of first metal via patterns,
- wherein the third insulation film has a dielectric constant of more than 2.7,
- wherein the first metal wiring and the plurality of first metal via patterns are formed in the third insulation film, and
- wherein each of the first metal via patterns has a top which contacts with a bottom of the first metal wiring;
- and
- a fourth layer on the third layer, wherein the fourth layer includes a pad electrode, a passivation film and an opening,
- wherein the pad electrode includes an aluminum material and electrically connects to the first metal wiring,
- wherein the passivation film includes SiN and covers over the pad electrode and the third layer, and
- wherein the opening opens the passivation film to expose a part of the pad electrode,
- wherein the first dummy metal wiring, the first metal wiring and the plurality of the first metal via patterns are formed directly under the pad electrode, and
- wherein no dummy metal pattern and no dummy metal via pattern are formed in the third layer directly under the pad electrode.
13 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first layer on the semiconductor substrate, wherein the first layer includes a first insulation film and a gate electrode formed on the semiconductor substrate;
- a plurality of second layers on the first layer, wherein each of the second layers includes a second insulation film and a first dummy metal wiring,
- wherein the second insulation film is a film of one member selected from a group consisting of a SiOC, methylsilses-quioxane and a porous organic polymer film, and
- wherein the first dummy metal wiring is formed in the second insulation film;
- a third layer on the plurality of second layers, wherein the third layer includes a third insulation film, a first metal wiring and a plurality of first metal via patterns,
- wherein the third insulation film has a dielectric constant of more than 2.7,
- wherein the first metal wiring and the plurality of first metal via patterns are formed in the third insulation film, and
- wherein each of the first metal via patterns has a top which contacts with a bottom of the first metal wiring;
- and
- a fourth layer on the third layer, wherein the fourth layer includes a pad electrode, a passivation film and an opening,
- wherein the pad electrode includes an aluminum material and electrically connects to the first metal wiring,
- wherein the passivation film includes SiN and covers over the pad electrode and the third layer, and
- wherein the opening opens the passivation film to expose a part of the pad electrode,
- wherein the first dummy metal wiring, the first metal wiring and the plurality of the first metal via patterns are formed directly under the pad electrode, and
- wherein no dummy metal pattern and no dummy metal via pattern are formed in the third layer directly under the pad electrode.
13 more elements
Dependencies are inferred from the claim text.