Structure and process for the formation of TSVs
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Cheng Kuo, Kai-Ming Ching, Chen Chen-Shien
Life of this patent
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Abstract
An integrated circuit structure includes a semiconductor substrate; an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a top inter-metal dielectric (IMD); an opening penetrating the interconnect structure into the semiconductor substrate; a conductor in the opening; and an isolation layer having a vertical portion and a horizontal portion physically connected to each other. The vertical portion is on sidewalls of the opening. The horizontal portion is directly over the interconnect structure. The integrated circuit structure is free from passivation layers vertically between the top IMD and the horizontal portion of the isolation layer.
Claims18
An integrated circuit structure comprising:
- a semiconductor substrate;
- an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a top inter-metal dielectric (IMD);
- an opening penetrating the interconnect structure into the semiconductor substrate;
- a conductor in the opening;
- and
- an isolation layer having a vertical portion and a horizontal portion physically connected to each other, wherein the vertical portion is on sidewalls of the opening and the horizontal portion is directly over the interconnect structure, and wherein the integrated circuit structure is free from passivation layers in a space that extends in a vertical direction between the top IMD and the horizontal portion of the isolation layer.
An integrated circuit structure comprising:
- a semiconductor substrate;
- an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a top inter-metal dielectric (IMD);
- a top metal pad in the top IMD and having a top surface substantially level with a top surface of the top IMD;
- an opening extending through the interconnect structure and into the semiconductor substrate;
- a conductor in the opening;
- an isolation layer having a vertical portion and a horizontal portion physically connected to each other, wherein the vertical portion is on sidewalls of the opening, and wherein the horizontal portion extends over the top IMD and comprises an additional opening exposing the top metal pad;
- and
- a continuous metal feature comprising a vertical portion extending into the opening to form the conductor, and a horizontal portion connecting the conductor and the top metal pad.
An integrated circuit structure comprising:
- a semiconductor substrate;
- an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a top inter-metal dielectric (IMD);
- a top metal pad over the top IMD;
- a conductor formed in an opening extending through the interconnect structure and into the semiconductor substrate;
- an isolation layer having a vertical portion and a horizontal portion physically connected to each other, wherein the top metal pad has at least a lower portion in the horizontal portion of the isolation layer, and wherein the horizontal portion extends on sidewalls and edge portions of the top metal pad;
- and
- a continuous metal feature comprising a vertical portion extending into the opening to form a;
- through silicon via (TSV), and a horizontal portion connecting the conductor and the top metal pad.
Dependencies are inferred from the claim text.