US 7,843,052 B1Granted

Semiconductor devices and fabrication methods thereof

AssigneeAmkor Technology, Inc.

InventorsMin Yoo, Ki Wook Lee, Min Jae Lee

Life of this patent

Estimating the term…

Loading patent…

Abstract

Semiconductor devices are disclosed. In an embodiment, a plurality of second semiconductor dies formed with through-silicon vias are stacked on a first semiconductor die. The stack of the second semiconductor dies is encapsulated by an encapsulant. Redistribution layers are formed on one surface of the stack and are connected to the through-silicon vias. Solder balls are attached to the respective redistribution layers. In another embodiment, a plurality of second semiconductor dies formed with through-silicon vias are stacked on a first semiconductor die formed with through-silicon vias. Redistribution layers are formed on the back surface of the first semiconductor die. Solder balls are attached to the respective redistribution layers. Further disclosed are methods for fabricating the semiconductor devices.

Claims13

Dependent claims

A semiconductor device comprising:

a first semiconductor die comprising:
a first surface;
a second surface opposed to the first surface;
third surfaces perpendicular to the first surface and the second surface;
and
bond pads formed on the first surface;
a stack of second semiconductor dies electrically interconnected to one another by electrically conductive through vias and electrically connected to the bond pads of the first semiconductor die, wherein the first semiconductor die has a larger width than the second semiconductor dies;
conductive connection members comprising:
first conductive connection members interposed between and electrically interconnecting the first semiconductor die and the lowest one of the second semiconductor dies;
and
second conductive connection members interposed between and electrically interconnecting the adjacent second semiconductor dies;
an encapsulant encapsulating the first semiconductor die, the second semiconductor dies and the conductive connection members, wherein the encapsulant covers the first surface, the second surface and the third surfaces being exposed to the outside of the encapsulant, the encapsulant comprising side surfaces in a same plane as the third surfaces;
redistribution layers electrically connected to the through vias of the second semiconductor dies;
and
solder balls electrically connected to the redistribution layers.

12 more elements

A semiconductor device comprising:

a first semiconductor die comprising:
a first surface;
a second surface opposed to the first surface;
bond pads formed on the first surface;
and
electrically conductive through vias penetrating the bond pads and extending to the second surface;
a stack of second semiconductor dies electrically interconnected to one another by electrically conductive through vias and electrically connected to the bond pads of the first semiconductor die, wherein the first semiconductor die has a larger width than the second semiconductor dies;
conductive connection members comprising:
first conductive connection members interposed between and electrically interconnecting the first semiconductor die and the lowest one of the second semiconductor dies;
and
second conductive connection members interposed between and electrically interconnecting the adjacent second semiconductor dies;
an encapsulant encapsulating the first semiconductor die, the second semiconductor dies and the conductive connection members;
redistribution layers formed on the second surface and electrically connected to the through vias of the first semiconductor die;
and
solder balls electrically connected to the redistribution layers.

12 more elements

Dependencies are inferred from the claim text.