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US 7,843,041 B2Granted
Thin-film circuit device having a low strength region, method for manufacturing the thin-film circuit device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsTaimei Kodaira, Sumio Utsunomiya
Life of this patent
Estimating the term…
Abstract
A thin-film circuit device includes a substrate and a thin-film circuit layer, disposed on the substrate, having an element region and a low-strength region. The element region includes thin-film elements. The low-strength region extends between an end portion of the thin-film circuit layer and the element region and has a mechanical strength less than that of the surroundings of the low-strength region.
Claims8
A thin-film circuit device comprising:
- a substrate;
- a thin-film circuit layer disposed on the substrate, the thin-film circuit layer having an element region;
- and
- a low-strength region provided in the thin-film circuit layer, the low strength region extending between an end portion of the thin-film circuit layer and the element region,
- wherein the thin-film circuit layer includes a first protective layer provided on the substrate, a thin-film transistor provided on the first protective layer in the element region, and a second protective layer covering the thin-film transistor,
- wherein the low-strength region has a groove formed in the second protective layer, the groove surrounding the element region, and
- wherein the groove has a depth equal to at least one half of a thickness of the thin-film circuit layer.
4 more elements
Dependencies are inferred from the claim text.