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US 7,843,030 B2Granted
Method, apparatus, material, and system of using a high gain avalanche photodetector transistor
OwnerRanbir Singhinventor
Life of this patent
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Abstract
Here, we demonstrate new material/structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The desired properties of an optimum photodetector is achieved. Different variations are discussed, both in terms of structure and material.
Claims14
A photo detector transistor formed of a semiconductor, the transistor comprising:
- a substrate layer;
- a collector layer of the semiconductor formed on the substrate layering having a first conductivity type;
- an intermediate layer of one or more layers of the semiconductor having a second conductivity type formed on the collector layer;
- an emitter layer of the semiconductor of the first conductivity type formed on the intermediate layer of the second conductivity type;
- wherein the one or more layers includes an absorption layer of the second conductivity type having low doping configured to absorb photons of a particular wavelength and the collector layer and the emitter layer of the first conductivity type are highly doped and the doping of the absorption layer is lower than the doping of the collector layer and the emitter layer is fully depleted and a wavelength of photons absorbed by the transistor corresponds to the semiconductor.
2 more elements
A photo detector transistor formed of a semiconductor, the transistor comprising:
- a substrate layer;
- a collector layer of the semiconductor formed on the substrate layering having a first conductivity type;
- an intermediate layer of one or more layers of the semiconductor having a second conductivity type formed on the collector layer;
- an emitter layer of the semiconductor of the first conductivity type formed on the intermediate layer of the second conductivity type;
- an anode formed on the emitter layer;
- and
- a cathode formed on the substrate, wherein the one or more layers includes an absorption layer of the second conductivity type configured to absorb photons of a particular wavelength and a current gain of the photo detector transistor increases with an operating bias applied between the anode and the cathode and a reduction in an un-depleted portion of the absorption layer with increasing bias increases the current gain.
4 more elements
A photo detector transistor formed of a semiconductor, the transistor comprising:
- a substrate layer;
- a collector layer of the semiconductor formed on the substrate layering having a first conductivity type;
- an intermediate layer of one or more layers of the semiconductor having a second conductivity type formed on the collector layer;
- an emitter layer of the semiconductor of the first conductivity type formed on the intermediate layer of the second conductivity type;
- wherein the one or more layers includes an absorption layer of the second conductivity type configured to absorb photons and a doping of the emitter layer determines a wavelength of photons absorbed by the transistor and the doping is determined by:
- N
- E
-
- W
- E
- ≤
- ɛ
-
-
- E
- q
- where NE is a doping of the emitter layer, WE is a width of the emitter layer, ∈ is a dielectric constant of the semiconductor, q is electronic charge, and E is a maximum electric field at a junction of the emitter layer.
14 more elements
Dependencies are inferred from the claim text.