Solid-state imaging device, camera and method of producing the solid-state imaging device
AssigneeSony Corporation
InventorHideo Kanbe
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side.
Claims8
A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, said solid-state imaging device comprising:
- a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and
- a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration,
- wherein the second impurity concentration has a concentration gradient increasing toward the second surface side.
A camera comprising:
- a solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface side of said epitaxial layer;
- an optical system focusing light on the second surface of said solid-state imaging device;
- and
- a signal processing circuit performing a predetermined signal processing with respect to an output signal from said solid-state imaging device,
- wherein said solid-state imaging signal includes
- a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and
- a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration,
- wherein the second impurity concentration has a concentration gradient increasing toward said second surface.
Dependencies are inferred from the claim text.