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US 7,843,013 B2Granted
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsRyo Nakagawa, Takayuki Yamada
Life of this patent
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Abstract
A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode.
Claims7
A semiconductor device, comprising:
- a semiconductor substrate;
- an isolation region formed in the semiconductor substrate;
- a first active region defined in the semiconductor substrate and surrounded by the isolation region;
- a second active region defined in the semiconductor substrate and surrounded by the isolation region;
- an NMOS transistor formed in the first active region and including an n-type gate electrode made of silicon doped with an n-type impurity;
- a first PMOS transistor formed in the second active region and including a first p-type gate electrode made of silicon doped with a p-type impurity;
- and
- a p-type resistor formed on the isolation region, made of silicon doped with a p-type impurity, and having an internal stress greater than that of the first p-type gate electrode.
5 more elements
Dependencies are inferred from the claim text.