Electronic device including insulating layers having different strains

An electronic device comprising:

• a field isolation region;
• a first active region lying immediately adjacent to the field isolation region, and including a p-channel transistor;
• a second active region lying immediately adjacent to the field isolation region, and including an n-channel transistor;
• a first insulating layer having a first strain and including a first portion overlying the field isolation region, wherein, from a top view, the first portion lies entirely within the field isolation region, and wherein a second portion of the first insulating layer overlies the p-channel transistor;
• and
• a second insulating layer having a second strain different from the first strain and including an opening wherein, from a top view, the first portion of the first insulating layer lies within the opening in the second insulating layer, and wherein the second insulating layer overlies the n-channel transistor.