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US 7,843,006 B2Granted
Semiconductor component arrangement having a power transistor and a temperature measuring arrangement
AssigneeInfineon Technologies AG
InventorsRainald Sander, Markus Zundel
Life of this patent
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Abstract
A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature measuring circuit comprises a temperature-dependent resistor and an evaluation circuit coupled to the temperature-dependent resistor. The resistor is formed by a portion of said first semiconductor zone.
Claims15
A semiconductor component arrangement, comprising:
- a power transistor comprising a gate electrode, a source zone, a drain zone and a body zone, said body zone being arranged in a first semiconductor zone of a first conduction type,
- a temperature measuring circuit comprising a temperature-dependent resistor, which is formed by a portion of said first semiconductor zone, and an evaluation circuit coupled to said temperature-dependent resistor;
- wherein said temperature-dependent resistor in said first semiconductor zone is in contact with first and second connecting zones which are of the same conduction type as the first semiconductor zone, but which have a higher level of doping, and which are in contact with first and second connecting electrodes.
A semiconductor component arrangement, which has:
- a power transistor comprising a gate electrode, a source zone, a drain zone and a body zone, said body zone being arranged in a first semiconductor zone of a first conduction type;
- a temperature-dependent resistor, which is formed by a portion of said first semiconductor zone, and a constant current source coupled to said temperature-dependent resistor;
- and
- a node coupled to the resistor providing a voltage level corresponding to the temperature;
- and
- wherein said temperature-dependent resistor in said first semiconductor zone is in contact with first and second connecting zones which are of the same conduction type as the first semiconductor zone, the connecting zones have a higher level of doping than the temperature dependent resistor.
3 more elements
Dependencies are inferred from the claim text.