Back to results
US 7,842,985 B2Granted
CMOS image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorKeun Hyuk Lim
Life of this patent
Estimating the term…
Abstract
Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includes first and second photodiode regions for generating electrons in response to incident light, and a transfer transistor positioned between the first and second photodiodes for receiving the generated electrons transferred from the first and/or second photodiode.
Claims7
A CMOS image sensor comprising:
- first and second photodiode regions for generating electrons in response to incident light;
- and
- a transfer transistor of the CMOS image sensor positioned between the first and second photodiode regions for receiving the generated electrons transferred from the first and second photodiode regions, wherein the transfer transistor has a first gate electrode and a second gate electrode in a same pixel of the CMOS image sensor;
- and
- a floating diffusion region between the first gate electrode and the second gate electrode,
- wherein an end part of the first gate electrode and an end part of the second gate electrode are extended to an outer region of the floating diffusion region and are connected to each other to surround the floating diffusion region to form “U”-type finger structure in a single layer,
- wherein the first and second photodiode regions are spaced apart and separated from each other by the transfer transistor positioned therebetween.
4 more elements
A CMOS image sensor comprising:
- first and second photodiode regions for generating electrons in response to incident light;
- and
- a transfer transistor of the CMOS image sensor positioned between the first and second photodiode regions for receiving the generated electrons transferred from the first and second photodiode regions, wherein the transfer transistor has a first gate electrode and a second gate electrode in a same pixel of the CMOS image sensor;
- a floating diffusion region between the first gate electrode and the second gate electrode,
- wherein an end part of the first gate electrode and an end part of the second gate electrode are extended to an outer region of the floating diffusion region and are connected to each other to surround the floating diffusion region to form “U”-type finger structure in a single layer,
- wherein a channel length of the second gate electrode is twice as long as a channel length of the first gate electrode,
- wherein the first and second photodiode regions are spaced apart and separated from each other by the transfer transistor positioned therebetween.
4 more elements
Dependencies are inferred from the claim text.