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US 7,842,983 B2Granted
Boundaries with elevated deuterium levels
AssigneeIntel Corporation
InventorsAshutosh Ashutosh, Huicheng Chang, Adrien R. Lavoie, Aaron A. Budrevich
Life of this patent
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Abstract
A device is annealed in a deuterium atmosphere. Deuterium penetrates the device to a boundary, which is passivated by the deuterium.
Claims7
A semiconductor device, comprising:
- a substrate;
- a contact region adjacent the substrate;
- and
- a boundary between the substrate and the contact region, a region adjacent the boundary having deuterium present in a concentration greater than 1×1017 atoms per cubic centimeter;
- and
- wherein a deuterium concentration in the contact region is higher immediately adjacent the boundary than in some portions of the contact region further from the boundary.
3 more elements
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises silicon;
- a contact region adjacent the substrate;
- and
- a boundary between the substrate and the contact region, a region adjacent the boundary having deuterium present in a concentration greater than 1×1017 atoms per cubic centimeter.
1 more element
A semiconductor device, comprising:
- a substrate;
- a contact region adjacent the substrate, wherein the contact region comprises a silicide material;
- and
- a boundary between the substrate and the contact region, a region adjacent the boundary having deuterium present in a concentration greater than 1×1017 atoms per cubic centimeter.
1 more element
A semiconductor device, comprising:
- a first region, wherein the first region is a source contact of a transistor that comprises a silicide material;
- a second region adjacent the first region, wherein the second region is a substrate that comprises silicon;
- and
- a boundary region between the first region and the second region, the boundary region having deuterium present in a concentration greater than 1×1017 atoms per cubic centimeter.
1 more element
Dependencies are inferred from the claim text.