Gallium nitride heterojunction schottky diode
AssigneeAlpha and Omega Semiconductor Incorporated
InventorTingGang Zhu
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Abstract
A gallium nitride based semiconductor diode includes a substrate, a GaN layer formed on the substrate, an AlGaN layer formed on the GaN layer where the GaN layer and the AlGaN layer forms a cathode region of the diode, a metal layer formed on the AlGaN layer forming a Schottky junction therewith where the metal layer forms an anode electrode of the diode, and a high barrier region formed in the top surface of the AlGaN layer and positioned under an edge of the metal layer. The high barrier region has a higher bandgap energy than the AlGaN layer or being more resistive than the AlGaN layer.
Claims14
A gallium nitride based semiconductor diode, comprising:
- a substrate;
- a GaN layer formed on the substrate;
- an AlGaN layer formed on the GaN layer, the GaN layer and the AlGaN layer forming a cathode region of the diode;
- a metal layer formed on the AlGaN layer forming a Schottky junction therewith, the metal layer forming an anode electrode of the diode;
- and
- a high barrier region formed in the top surface of the AlGaN layer and positioned under an edge of the metal layer, the high barrier region having a higher bandgap energy than the AlGaN layer or being more resistive than the AlGaN layer.
Dependencies are inferred from the claim text.