Compound semiconductor light-emitting diode and method for fabrication thereof
AssigneeShowa Denko K.K.
InventorsTakashi Watanabe, Ryouichi Takeuchi
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Abstract
A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less.
Claims6
A compound semiconductor light-emitting diode comprising:
- a light-emitting layer formed of aluminum-gallium-indium phosphide ((AlXGa1-X) YIn1-YP wherein 0 ≦X ≦1, 0 ≦Y ≦1);
- component layers individually having a light-emitting part formed of a Group III-V compound semiconductor;
- a transparent supporting layer bonded to an outermost surface layer of the light-emitting part and transparent to light emitted from the light-emitting layer;
- and
- a bonding layer formed between the supporting layer and the outermost surface layer of the light-emitting part and containing oxygen atoms at a concentration of 1 ×1020 cm −3 or less,
- wherein the outermost surface layer of the light-emitting part whose side is bonded to the supporting layer and the supporting layer are both formed of gallium phosphide (GaP), and
- wherein the bonding layer has a nonstoichiometric composition represented by formula GaXPl-X wherein 0.5 <X <0.7.
A method for the fabrication of a compound semiconductor light-emitting diode comprising:
- a light-emitting layer formed of aluminum-gallium-indium phosphide ((AlXGal-X)YIn1-YP wherein 0≦X ≦1, 0≦Y ≦1);
- component layers individually having a light-emitting part formed of a Group III-V compound semiconductor;
- a transparent supporting layer bonded to an outermost surface layer of the light-emitting part and transparent to light emitted from the light-emitting layer;
- and
- a bonding layer formed between the supporting layer and the outermost surface layer of the light-emitting part and containing oxygen atoms at a concentration of 1 ×1020 cm−3 or less,
- wherein the outermost surface layer of the light-emitting part whose side is bonded to the supporting layer and the supporting layer are both formed of gallium phosphide (GaP), and
- wherein the bonding layer has a nonstoichiometric composition represented by formula GaXP1-X wherein 0.5<X <0.7,
- said method comprising the steps of:
- growing the component layers of the light-emitting part on a substrate to form the light-emitting part;
- polishing the light-emitting part by mirror-polishing the outermost surface of the light-emitting part to an average roughness of 0.3 nm or less;
- preparing the supporting layer separately of the light-emitting part;
- irradiating one or both of the polished outermost surface layer of the light-emitting part and a surface of the supporting layer to be bonded to the light-emitting part in a vacuum with atoms or ions possessing an energy of 50 eV or more;
- and
- bonding the polished outermost surface layer of the light-emitting part and the surface of the supporting layer.
Dependencies are inferred from the claim text.