US 7,842,963 B2 · Electrical contacts for a semiconductor light emitting apparatus

Abstract

A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.

Claims23

Dependent claims

A process for forming electrical contacts for a semiconductor light emitting apparatus, the light emitting apparatus having a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer, the process comprising:

forming at least a first elongate electrical contact and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, said first and second contacts being oriented at an angle to each other, said first contact having a first end in proximity with said second contact, said first end being sufficiently spaced apart from said second contact such that when current is supplied to the first layer through said contacts, current contributions from said first end of said first contact and said second contact in an area generally between said first end and said second contact cause a current density in said area that is approximately equal to a current density elsewhere along said first and second contacts;
wherein no electrical contact is located in the area between said first end and said second contact.

A semiconductor structure for use in a semiconductor light emitting apparatus, the structure comprising:

a first layer having a first conductivity type;
an active layer for generating light, said active layer overlying said first layer;
a second layer having a second conductivity type, said second layer overlying said active layer;
at least a first and a second elongate electrical contact extending through said second layer and said active layer and in electrical contact with said first layer, said first and second contacts being oriented at an angle to each other, said first contact having a first end proximate said second contact, said first end being sufficiently spaced apart from said second contact such that when current is supplied to the first layer through said contacts, current contributions from said first end of said first contact and said second contact in an area generally between said first end and said second contact cause a current density in said area that is approximately equal to a current density elsewhere along said first and second contacts;
wherein no electrical contact is located in the area between said first end and said second contact.

2 more elements

Dependencies are inferred from the claim text.

Electrical contacts for a semiconductor light emitting apparatus

Life of this patent

Electrical contacts for a semiconductor light emitting apparatus

Life of this patent

Abstract

Claims23