Process for synthesizing halogenated derivatives of fluorescein for use in the production of non-volatile memory devices
AssigneeSTMicroelectronics S.r.l.
InventorsMaria Viviana Volpe, Angela Cimmino, Alessandro Pezzella, Aniello Palma
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Abstract
A process performs solid phase synthesis of halogenated derivatives of fluorescein, and includes reacting fluorescein with a halide MX, wherein M is an alkali metal and X is a halogen, and Oxone® (2 KHSO5.KHSO4.K2SO4), at a temperature higher than or equal to 150° C. A structure uses a halogenated derivative of fluorescein selected from the group consisting of 2′,4′,5′-trichlorofluorescein, 2′,4′,5′,7′-tetrachlorofluorescein, 4′,5′-diiodofluorescein diacetate and 2′,4′,5′-triiodofluorescein as electro-bistable material in a non-volatile memory device.
Claims19
A process for synthesizing halogenated derivatives of fluorescein, comprising reacting fluorescein with a halide MX, wherein M is an alkali metal and X is a halogen, and 2 KHSO5·KHSO4·K2SO4 in solid phase, at a temperature higher than or equal to 150° C.
A process for synthesizing chlorine derivatives of fluorescein, comprising reacting fluorescein with FeCl3 in solid phase at a temperature higher than or equal to 130° C.
A process for halogenating fluorescein comprising:
- mixing fluorescein, an alkali metal halide, and an oxidizing agent to provide a reaction mixture in the absence of any solvent, wherein the oxidizing agent is 2 KHSO5·KHSO4·K2SO4;
- and
- heating the reaction mixture to form fluorescein substituted with one or more halogens.
Dependencies are inferred from the claim text.