Method for manufacturing semiconductor device using quadruple-layer laminate

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the organic underlayer film (layer A) is a layer including a polymer having a naphthalene ring in a main chain or a side chain bonded to the main chain.

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the silicon-containing hard mask (layer B) has a silicon content of 15 to 45% by mass in the silicon-containing hard mask (layer B).

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the silicon-containing hard mask (layer B) is a layer including a polymer containing a polysilane, a polysiloxane, a polycarbosilane or a combination thereof.

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the silicon-containing hard mask (layer B) is a layer including a polymer containing a polycarbosilane and a polysilane, a polysiloxane or a combination thereof.

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the organic antireflective film (layer C) includes a polymer in which a molecular structure of the polymer contained in the organic antireflective film (layer C) is similar to a molecular structure of a polymer contained in the photoresist film (layer D).

The method for manufacturing a semiconductor device comprising:

• laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate, wherein the organic antireflective film (layer C) is a layer including a polymer having a benzene ring, a heterocyclic ring or a combination thereof in a main chain constituting the polymer or a side chain bonded to the main chain.