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US 7,842,614 B2Granted
Method for manufacturing semiconductor device and polisher used in the method for manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsTsuyoshi Kanki, Takahiro Kimura, Tetsuya Shirasu
Life of this patent
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Abstract
A method for manufacturing a semiconductor device, including depositing an interconnect material including Cu or Cu alloy over an insulating film, and polishing the interconnect material by CMP with a polishing liquid, wherein the oxidation-reduction potential (ORP) of the polishing liquid is controlled so as to be in the range of 400 mV to 700 mV vs. Ag/AgCl.
Claims17
A method for manufacturing a semiconductor device, comprising:
- depositing an interconnect material including Cu or Cu alloy over an insulating film, and
- polishing the interconnect material by CMP with a polishing liquid,
- wherein oxidation-reduction potential (ORP) of the polishing liquid is controlled so as to be in the range of 400 mV to 700 mV vs. Ag/AgCl,
- wherein the polishing liquid comprises at least one selected from the grow consisting of an oxidant, a dissolving agent, a surfactant, an anticorrosive agent and abrasive grain, and
- wherein the dissolving agent comprises at least one selected from the group consisting of triammonium citrate and malic acid.
2 more elements
A polisher polishing an interconnect material including Cu or Cu alloy deposited over an insulating film by CMP with a polishing liquid, comprising:
- a polishing liquid vessel storing the polishing liquid,
- a polishing liquid supplying unit supplying the polishing liquid in the polishing liquid vessel to the interconnect material,
- a measuring unit measuring the oxidation-reduction potential (ORP) of the polishing liquid, and
- a chemical solution supplying unit supplying a chemical solution when the oxidation-reduction potential (ORP) of the polishing liquid measured by the measuring unit is outside the range of 400 mV to 700 mV vs. Ag/AgCl,
- wherein the polishing liquid comprises at least one selected from the group consisting of an oxidant, a dissolving agent, a surfactant, an anticorrosive agent and abrasive grain, and
- wherein the dissolving agent comprises at least one selected from the group consisting of triammonium citrate and malic acid.
3 more elements
Dependencies are inferred from the claim text.