Semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a plurality of first trenches for a plurality of inner through-electrodes at a first surface of a semiconductor substrate;
• forming a second trench for a first outer through-electrode at the first surface of the semiconductor substrate, wherein the second trench extends continuously and completely surrounds the plurality of first trenches in plan view of the first surface of the semiconductor substrate;
• depositing a first insulating layer over the first surface so that an inner through-electrode insulating layer and an outer peripheral through-electrode insulating layer are formed on the first surface and inside the plurality of first trenches and the second trench;
• forming a conducting layer over the first surface so that the plurality of first trenches and the second trench are filled with the conducting layer and the conducting layer is formed on the inner through-electrode insulating layer and the outer peripheral through-electrode insulating layer;
• and
• flattening the first surface to form the plurality of inner through-electrodes and the first outer peripheral through-electrode which are formed of the conducting layer, wherein the plurality of inner through-electrodes are thereby surrounded by the first outer peripheral through-electrode.

A method of manufacturing a semiconductor device, comprising:

• forming a first trench in a semiconductor substrate, the first trench comprising intersecting channels defining a mesh shape and a plurality of semiconductor pillars each surrounded by said intersecting channels;
• forming a second trench in the semiconductor substrate, the second trench surrounding the first trench to form a first semiconductor ring;
• forming a first conductive layer in the first trench with an intervention of a first insulating film between each of the semiconductor pillars and the first conductive layer and between the first semiconductor ring and the first conductive layer;
• and
• forming a second conductor layer in the second trench with an intervention of a second insulating film between the first semiconductor ring and the second conductive layer, the second conductive layer surrounding the first conductive layer.