Method for manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorAtsushi Kariya
Life of this patent
Estimating the term…
Abstract
A hole is formed in an insulating layer. A semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. Tungsten-containing gas and at least one of B2H6 gas and SiH4 gas are introduced into a reaction chamber to thereby form a first tungsten layer. Subsequently, at least one of H2 gas and inert gas is introduced into the reaction chamber, the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds, and tungsten-containing gas is introduced into the reaction chamber to thereby form a second tungsten layer on the first tungsten layer.
Claims14
A method of manufacturing a semiconductor device, comprising, in the following order:
- forming a hole in an insulating layer arranged above a surface of a semiconductor substrate;
- forming a first tungsten layer in said hole by heating said semiconductor substrate carried into a reaction chamber at a temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B2H6 gas and SiH4 gas into said reaction chamber;
- introducing at least one of H2 gas and inert gas into said reaction chamber and raising the temperature of said semiconductor substrate to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds;
- and
- forming a second tungsten layer on said first tungsten layer by introducing tungsten-containing gas into said reaction chamber.
A method of manufacturing a semiconductor device, comprising:
- forming a hole in an insulating layer arranged above a surface of a semiconductor substrate;
- forming a first tungsten layer on a bottom and side surfaces of said hole by heating said semiconductor substrate in a reaction chamber to a first temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B2H6 gas and SiH4 gas into said reaction chamber;
- introducing at least one of H2 gas and inert gas into said reaction chamber and raising a temperature of said semiconductor substrate to a second temperature higher than said first temperature and equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds;
- and
- forming a second tungsten layer on said first tungsten layer by introducing tungsten-containing gas into said reaction chamber, said second tungsten layer filling said hole.
Dependencies are inferred from the claim text.