Method for manufacturing semiconductor device having via plug

Abstract

A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by a first etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by a second etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.

Dependencies are inferred from the claim text.