Semiconductor device and method of providing a thermal dissipation path through RDL and conductive via

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming a conductive via around a perimeter of the semiconductor die;
• forming a first conductive layer on a front side of the semiconductor die, the first conductive layer being thermally connected to the conductive via;
• forming a second conductive layer on a backside of the semiconductor die opposite the front side of the semiconductor die, the second conductive layer being thermally connected to the conductive via;
• forming an insulating layer over the semiconductor die;
• removing a portion of the insulating layer to expose a thermal dissipation region of semiconductor die;
• forming a thermal via through the insulating layer to the first conductive layer;
• and
• forming a thermally conductive layer over the thermal dissipation region and thermal via.

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming a conductive via around a perimeter of the semiconductor die;
• forming a first conductive layer on a front side of the semiconductor die, the first conductive layer being thermally connected to the conductive via;
• and
• forming a thermally conductive layer over a thermal dissipation region of the semiconductor die, the semiconductor die having a thermal dissipation path from the thermal dissipation region through the thermally conductive layer, first conductive layer, and conductive via.