US 7,842,606 B2 · Method of depositing thin film and method of manufacturing semiconductor using the same

Abstract

Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

Claims11

Dependent claims

A method of depositing a thin film on a semiconductor substrate, the method of comprising:

(a) depositing a carbon anti-reflective film on a bottom film of the semiconductor substrate while applying both RF power and MF power to the substrate;
and
(b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) for at least two limited periods of time to deposit at least two thin films of a-C:N, a-C:F or a-C:Si to at least two of a bottom surface, an inner portion, and a top surface of the carbon anti-reflective film, wherein the at least two thin films have high selectivity and are deposited to thicknesses of 1 to 100 nm using an atomic layer deposition process,
wherein the at least two limited periods of time are non-contiguous in time such that a layer of carbon anti-reflective film is deposited between the at least two thin films, and
wherein the adding step (b) occurs while the depositing step (a) occurs such that both the adding step (b) and the depositing step (a) simultaneously occur during the at least two limited periods of time.

2 more elements

A method of manufacturing a semiconductor using a carbon anti-reflective film, the method of comprising:

(a) depositing the carbon anti-reflective film on a bottom film of the semiconductor substrate while applying both RF power and MF power to the substrate;
(b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) for at least two limited periods of time to deposit at least two thin films of a-C:N, a-C:F or a-C:Si to at least two of a bottom surface, an inner portion, and a top surface of the carbon anti-reflective film, wherein the at least two thin films have high selectivity and are deposited to thicknesses of 1 to 100 nm using an atomic layer deposition process;
(c) coating a photo-sensitive film on the carbon anti-reflective film formed through (a) and (b) processes, and performing exposing and etching for the photo-sensitive film to form a pattern;
(d) removing the photo-sensitive film after forming the pattern;
and
(e) etching the oxide film using CF4 or CHF3 as an etching gas having high selectivity with respect to the carbon anti-reflective film and the oxide film,
wherein the at least two limited periods of time are non-contiguous in time such that a layer of carbon anti-reflective film is deposited between the at least two thin films, and
wherein the adding step (b) occurs while the depositing step (a) occurs such that both the adding step (b) and the depositing step (a) simultaneously occur during the at least two limited periods of time.

5 more elements

Dependencies are inferred from the claim text.

Method of depositing thin film and method of manufacturing semiconductor using the same

Life of this patent

Method of depositing thin film and method of manufacturing semiconductor using the same

Life of this patent

Abstract

Claims11