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US 7,842,603 B2Granted
Method for fabricating semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsKyoung-Sik Han, Young-Jun Kim
Life of this patent
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Abstract
A method for fabricating a semiconductor memory device includes forming an insulation layer including a contact plug over a substrate structure, forming a metal line structure over the insulation layer, the metal line structure including a patterned diffusion barrier layer and a metal line and contacting the contact plug, and oxidizing a surface of the metal line to form a passivation layer over the metal line.
Claims12
A method for fabricating a semiconductor memory device, comprising:
- forming an insulation layer including a contact hole over a substrate structure;
- forming a plug material to fill the contact hole;
- performing a planarization process onto the plug material to form a contact plug, wherein an upper surface of the contact plug is substantially the same as an upper surface of the insulation layer;
- forming a metal line structure over the insulation layer including the contact plug, the metal line structure including a patterned diffusion barrier layer and a metal line formed over the patterned diffusion barrier layer and contacting the contact plug;
- and
- oxidizing surfaces of the metal line structure to form a passivation layer over the metal line structure.
3 more elements
Dependencies are inferred from the claim text.