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US 7,842,602 B2Granted
Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method
AssigneeRenesas Electronics Corporation
InventorsKoichi Ohto, Toshiyuki Takewaki, Tatsuya Usami, Nobuyuki Yamanishi
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Abstract
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.
Claims25
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first groove in a first insulating interlayer;
- burying a first metal layer in said groove;
- diffusing first silicon into said first metal layer from an upper surface thereof so that said first metal layer is converted into a first silicon-diffused metal layer;
- and
- forming a first metal diffusion barrier layer on said first silicon-diffused metal layer and said first insulating interlayer,
- wherein the first silicon-diffused metal layer includes no metal silicide, and wherein said first silicon-diffused metal layer includes at least one of hydrogen and carbon.
3 more elements
Dependencies are inferred from the claim text.