Fabricating electronic-photonic devices having an active layer with spherical quantum dots
AssigneeAlcatel-Lucent USA Inc.
InventorsNick Sauer, Nils Weimann, Liming Zhang
Life of this patent
Estimating the term…
Abstract
A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
Claims18
A method for manufacturing an electronic-photonic device, comprising:
- epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature;
- and
- forming an active layer on said n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, said active layer including a plurality of spheroid-shaped quantum dots;
- and
- depositing a p-doped III-V composite semiconductor alloy capping layer on said active layer at a third temperature, and wherein:
- said second temperature is less than said first temperature and said third temperature, and
- said active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
Dependencies are inferred from the claim text.