Back to results
US 7,842,594 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsHeung-Jae Cho, Hong-Seon Yang, Se-Aug Jang
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers.
Claims19
A method for fabricating a transistor, the method comprising:
- forming a recess by etching a gate target region in a substrate;
- forming a first gate insulation layer over a surface of the substrate having the recess, thereby forming a first resultant structure;
- forming spacers over sidewalls of the recess, wherein the spacers include material having a first work function, wherein the material having the first work function includes a semiconductor or a conductor;
- forming a second gate insulation layer over the spacers, thereby forming a second resultant structure;
- and
- forming a first conductive layer for a gate electrode over the second resultant structure and filling the recess, wherein the first conductive layer includes material having a second work function, wherein the second work function is higher than the first work function.
3 more elements
A method for fabricating a semiconductor device, the method comprising:
- forming an active area by forming an isolation layer on a substrate;
- forming a first groove by etching a channel area in the active area;
- forming a first gate insulation layer over a surface of the active area having the first groove, thereby forming a first resultant structure;
- forming spacers over sidewalls of the first groove, wherein the spacers comprise material having a first work function or insulation material;
- forming a second groove by etching a part of the isolation layer, wherein the second groove has a depth that is deeper than that of the first groove;
- forming a second gate insulation layer over a surface of the spacers and a surface of the active area exposed by the second groove;
- forming a first gate electrode overlapping with the first groove and the second groove crossing the active area, wherein the first gate electrode comprises material having a second work function, wherein the second work function is higher than the first work function;
- and
- forming source/drain regions in the active area at both sides of the first gate electrode.
6 more elements
Dependencies are inferred from the claim text.