Method for manufacturing a semiconductor substrate including laser annealing

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a first surface and a second surface, the second surface being arranged opposite to the first surface;
• introducing a first dopant into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface;
• performing at least a first laser anneal by directing at least one laser beam pulse comprising a first energy density onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface;
• introducing a second dopant into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth;
• and
• performing at least a second laser anneal by directing at least one further laser beam pulse comprising a second energy density onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface, wherein the second energy density is smaller than the first energy density.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a first surface and a second surface, the second surface being arranged opposite to the first surface;
• introducing a first dopant into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface;
• introducing a second dopant into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the second depth is smaller than the first depth;
• performing at least a first laser anneal by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a first surface and a second surface, opposite to the first surface;
• forming a first doping region by introducing a first dopant into the semiconductor substrate at the second surface having a peak doping concentration at a first depth with respect to the second surface;
• performing at least a first laser anneal at the second surface to activate the first dopant;
• forming a second doping region by introducing a second dopant into the semiconductor surface at the second surface having a peak doping concentration at a second depth with respect to the second surface, wherein the first depth is larger than the second depth;
• and
• performing at least a second laser anneal at the second surface to activate the second dopant.