Plasma CVD apparatus, method for manufacturing microcrystalline semiconductor layer, and method for manufacturing thin film transistor

A method for manufacturing a thin film transistor comprising:

• supplying a first reaction gas to a reaction chamber;
• producing glow discharge plasma by applying a first high-frequency electric power of 3 MHz to 30 MHz inclusive and a second high-frequency electric power of higher than 30 MHz and 300 MHz or lower, which are superimposed on each other, to an electrode provided in the reaction chamber, so that a microcrystalline semiconductor layer is deposited;
• supplying a second reaction gas to the reaction chamber;
• depositing an amorphous semiconductor layer by blocking the second high-frequency electric power;
• and
• forming the thin film transistor including the microcrystalline semiconductor layer and the amorphous semiconductor layer as a semiconductor layer,
• wherein the electrode has an almost rectangular shape including at least one side of 2000 mm or longer.

A method for manufacturing a thin film transistor comprising:

• supplying a first reaction gas to a reaction chamber;
• producing glow discharge plasma by applying a first high-frequency electric power of 3 MHz to 30 MHz inclusive and a second high-frequency electric power of higher than 30 MHz and 300 MHz or lower, which are superimposed on each other, to an electrode provided in the reaction chamber, so that a microcrystalline semiconductor layer is deposited;
• supplying a second reaction gas to the reaction chamber;
• depositing an amorphous semiconductor layer by blocking the second high-frequency electric power and continuing the application of the first high-frequency electric power;
• and
• forming the thin film transistor including the microcrystalline semiconductor layer and the amorphous semiconductor layer as a semiconductor layer,
• wherein the electrode has an almost rectangular shape including at least one side of 2000 mm or longer.

A method for manufacturing a thin film transistor comprising:

• supplying a first reaction gas in a reaction chamber;
• applying a first high-frequency electric power of 3 MHz to 30 MHz inclusive and a second high-frequency electric power of higher than 30 MHz and 300 MHz or lower, which are superimposed on each other, to an electrode provided in the reaction chamber, so that glow discharge plasma is produced;
• depositing a semiconductor layer over a substrate mounted in the reaction chamber;
• and
• forming the thin film transistor including the semiconductor layer,
• wherein the electrode has an almost rectangular shape including at least one side of 2000 mm or longer.