Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film over a single crystal semiconductor substrate;
• forming a brittle layer in the single crystal semiconductor substrate at a predetermined depth by adding an ion species to the single crystal semiconductor substrate through the first insulating film;
• forming a second insulating film over the first insulating film;
• bonding a surface of the second insulating film to a surface of a first substrate;
• performing heat treatment in a state in which the single crystal semiconductor substrate and the first substrate overlap with each other;
• generating a crack in the brittle layer and separating the single crystal semiconductor substrate with a portion of the single crystal semiconductor substrate left, thereby forming the first insulating film, the second insulating film, and a first semiconductor film which is the portion of the single crystal semiconductor substrate over the first substrate;
• adding impurities imparting one conductivity type to the first semiconductor film by doping;
• and
• forming a second single crystal semiconductor film which is crystallized by solid-phase epitaxy over the first semiconductor film.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a brittle layer in a single crystal semiconductor substrate at a predetermined depth from a surface of the single crystal semiconductor substrate by adding an ion species to the single crystal semiconductor substrate;
• bonding the surface of the single crystal semiconductor substrate to a surface of a first substrate;
• performing heat treatment in a state in which the single crystal semiconductor substrate and the first substrate overlap with each other;
• generating a crack in the brittle layer and separating the single crystal semiconductor substrate with a portion of the single crystal semiconductor substrate left over the first substrate, to form a first semiconductor film comprising single crystal semiconductor;
• adding impurities imparting first one conductivity type to the first semiconductor film by doping to form a semiconductor region into which the impurities are implanted;
• forming a second semiconductor film which is crystallized by solid-phase epitaxy over the semiconductor region;
• forming a semiconductor island by patterning a stacked layer comprising the semiconductor region and the second semiconductor film;
• forming a gate insulating film on the semiconductor island;
• forming a gate electrode on the gate insulating film;
• adding impurities imparting second one conductivity type to the semiconductor island using the gate electrode as a mask.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a brittle layer in a single crystal semiconductor substrate at a predetermined depth from a surface of the single crystal semiconductor substrate by adding an ion species to the single crystal semiconductor substrate;
• bonding the surface of the single crystal semiconductor substrate to a surface of a first substrate;
• performing heat treatment in a state in which the single crystal semiconductor substrate and the first substrate overlap with each other;
• generating a crack in the brittle layer and separating the single crystal semiconductor substrate with a portion of the single crystal semiconductor substrate left over the first substrate, to form a first semiconductor film comprising single crystal semiconductor;
• adding p-type impurities to part of the first semiconductor film by doping to form a first semiconductor region into which the p-type impurities are implanted;
• adding n-type impurities to part of the first semiconductor film by doping to form a second semiconductor region into which the n-type impurities are implanted;
• and
• forming a second single crystal semiconductor film which is crystallized by solid-phase epitaxy over the first semiconductor region and the second semiconductor region.