Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

A method for manufacturing a semiconductor substrate, comprising the steps of:

• forming a first buffer layer on each of a plurality of single crystal semiconductor substrates;
• forming a damaged region in a region at a depth from a surface of single crystal semiconductor substrate, the damaged region being formed by irradiating each of the plurality of single crystal semiconductor substrates with accelerated ions;
• forming a second buffer layer on a surface of a base substrate;
• performing a substrate fixing treatment to fix one or more of the plurality of single crystal semiconductor substrates to the base substrate by bonding a surface of the first buffer layer and a surface of the second buffer layer;
• performing an electromagnetic wave irradiation treatment to divide the one or more of the plurality of single crystal semiconductor substrates fixed to the base substrate by the substrate fixing treatment along the damaged region by irradiating the one or more of the plurality of single crystal semiconductor substrates with an electromagnetic wave having a frequency of 300 MHz to 300 GHz;
• and
• performing the substrate fixing treatment and the electromagnetic wave irradiation treatment twice or more to form a semiconductor substrate where a plurality of single crystal semiconductor layers is fixed to the base substrate.

A method for manufacturing a semiconductor substrate, comprising the steps of:

• forming a damaged region in a region at a depth from a surface of single crystal semiconductor substrate, the damaged region being formed by irradiating each of the plurality of single crystal semiconductor substrates with accelerated ions;
• forming a buffer layer on a surface of a base substrate;
• performing a substrate fixing treatment to fix one or more of the plurality of single crystal semiconductor substrates to the base substrate by bonding a surface of the one or more of the plurality of single crystal semiconductor substrates and a surface of the buffer layer;
• performing an electromagnetic wave irradiation treatment to divide the one or more of the plurality of single crystal semiconductor substrates fixed to the base substrate by the substrate fixing treatment along the damaged region by irradiating the one or more of the plurality of single crystal semiconductor substrates with an electromagnetic wave having a frequency of 300 MHz to 300 GHz;
• and
• performing the substrate fixing treatment and the electromagnetic wave irradiation treatment twice or more to form a semiconductor substrate where a plurality of single crystal semiconductor layers is fixed to the base substrate.

A method for manufacturing a semiconductor substrate, comprising the steps of:

• forming a buffer layer on each of a plurality of single crystal semiconductor substrates;
• forming a damaged region in a region at a depth from a surface of single crystal semiconductor substrate, the damaged region being formed by irradiating each of the plurality of single crystal semiconductor substrates with accelerated hydrogen ions;
• performing a substrate fixing treatment to fix one or more of the plurality of single crystal semiconductor substrates to a base substrate by bonding a surface of the buffer layer and a surface of the base substrate;
• performing an electromagnetic wave irradiation treatment to divide the one or more of the plurality of single crystal semiconductor substrates fixed to the base substrate by the substrate fixing treatment along the damaged region by irradiating the one or more of the plurality of single crystal semiconductor substrates with an electromagnetic wave having a frequency of 300 MHz to 300 GHz;
• performing the substrate fixing treatment and the electromagnetic wave irradiation treatment twice or more to form a semiconductor substrate where a plurality of single crystal semiconductor layers is fixed to the base substrate;
• performing a heat treatment to heat the plurality of single crystal semiconductor layers of the semiconductor substrate at a temperature equal to or higher than 410° C. and lower than a melting point of the plurality of single crystal semiconductor layers;
• and
• performing a laser irradiation treatment to melt the plurality of single crystal semiconductor layers by irradiating each of the plurality of single crystal semiconductor layers with laser light after the heat treatment.

A method for manufacturing a semiconductor substrate, comprising the steps of:

• forming a first buffer layer on each of a plurality of single crystal semiconductor substrates;
• forming a damaged region in a region at a depth from a surface of single crystal semiconductor substrate, the damaged region being formed by irradiating each of the plurality of single crystal semiconductor substrates with accelerated hydrogen ions;
• forming a second buffer layer on a surface of a base substrate;
• performing a substrate fixing treatment to fix one or more of the plurality of single crystal semiconductor substrates to the base substrate by bonding a surface of the first buffer layer and a surface of the second buffer layer;
• performing an electromagnetic wave irradiation treatment to divide the one or more of the plurality of single crystal semiconductor substrates fixed to the base substrate by the substrate fixing treatment along the damaged region by irradiating the one or more of the plurality of single crystal semiconductor substrates with an electromagnetic wave having a frequency of 300 MHz to 300 GHz;
• performing the substrate fixing treatment and the electromagnetic wave irradiation treatment twice or more to form a semiconductor substrate where a plurality of single crystal semiconductor layers is fixed to the base substrate;
• performing a heat treatment to heat the plurality of single crystal semiconductor layers of the semiconductor substrate at a temperature equal to or higher than 410° C. and lower than a melting point of the plurality of single crystal semiconductor layers;
• and
• performing a laser irradiation treatment to melt the plurality of single crystal semiconductor layers by irradiating each of the plurality of single crystal semiconductor layers with laser light after the heat treatment.

A method for manufacturing a semiconductor substrate, comprising the steps of:

• forming a damaged region in a region at a depth from a surface of single crystal semiconductor substrate, the damaged region being formed by irradiating each of the plurality of single crystal semiconductor substrates with accelerated hydrogen ions;
• forming a buffer layer on a surface of a base substrate;
• performing a substrate fixing treatment to fix one or more of the plurality of single crystal semiconductor substrates to the base substrate by bonding a surface of the one or more of the plurality of single crystal semiconductor substrates and a surface of the buffer layer;
• performing an electromagnetic wave irradiation treatment to divide the one or more of the plurality of single crystal semiconductor substrates fixed to the base substrate by the substrate fixing treatment along the damaged region by irradiating the one or more of the plurality of single crystal semiconductor substrates with an electromagnetic wave having a frequency of 300 MHz to 300 GHz;
• performing the substrate fixing treatment and the electromagnetic wave irradiation treatment twice or more to form a semiconductor substrate where a plurality of single crystal semiconductor layers is fixed to the base substrate;
• performing a heat treatment to heat the plurality of single crystal semiconductor layers of the semiconductor substrate at a temperature equal to or higher than 410° C. and lower than a melting point of the plurality of single crystal semiconductor layers;
• and
• performing a laser irradiation treatment to melt the plurality of single crystal semiconductor layers by irradiating each of the plurality of single crystal semiconductor layers with laser light after the heat treatment.