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US 7,842,580 B2Granted
Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications
AssigneeInternational Business Machines Corporation
InventorsMax G. Levy, Steven H. Voldman
Life of this patent
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Abstract
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween.
Claims17
A method comprising:
- forming a high resistivity substrate comprising a silicon on insulator (SOI) substrate;
- and
- forming a buried inductor comprising a conductive coil having an inner end and an outer end directly in the high resistivity substrate, which is devoid of an insulator layer therebetween.
A method comprising:
- forming a high resistivity substrate;
- and
- forming a buried inductor comprising a conductive coil having an inner end and an outer end directly in the high resistivity substrate, which is devoid of an insulator layer therebetween,
- wherein forming the high resistivity substrate comprises:
- forming a first semiconductor region on a top surface;
- forming a buried oxide region below the first semiconductor region;
- and
- forming a second semiconductor region below the buried oxide region comprising a very low doped silicon region which provides a resistance from 1K Ohm-cm to 10K Ohm-cm.
5 more elements
Dependencies are inferred from the claim text.